WEDPN4M72V-100B2I
Synchronous DRAM, 4MX72, 7ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WEDPN4M72V-100B2I is a 4Mx72 Synchronous DRAM with a 7ns access time. This CMOS component operates with a maximum clock frequency of 100MHz and features a four-bank page burst access mode. The memory organization provides 4,194,304 words, each 72 bits wide. It supports auto and self-refresh functionalities and is housed in a 219-ball PBGA package (S-PBGA-B219) with a 1.27mm terminal pitch. Operating voltage ranges from 3.0V to 3.6V, with a nominal 3.3V. Extended temperature operation is supported from -40°C to +85°C. This component is suitable for applications in telecommunications, networking, and high-performance computing.
Additional Information
Series: WEDPN4M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| Clock_Frequency_Max | 100.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 301989888.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA219,16X16,50 |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Refresh_Cycles | 4096 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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