WEDPN4M72V-100B2
Synchronous DRAM Module, 4MX72, 7ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPN4M72V-100B2 is a Synchronous DRAM Module from the WEDPN4M72 series. This component features a memory organization of 4Mx72 with a 7ns access time, utilizing CMOS technology. It supports a four-bank page burst access mode and includes auto/self-refresh functionalities. The module is housed in a PBGA219 package, specifically a square plastic grid array with 219 ball terminals on the bottom. Operating within a supply voltage range of 3.00V to 3.60V, with a nominal voltage of 3.3V, this surface-mount device is suitable for high-performance applications across various industries including telecommunications and data storage. The memory density is approximately 301.99 MB.
Additional Information
Series: WEDPN4M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 301989888.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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