WEDPN4M64V-125BM
Synchronous DRAM, 4MX64, 6ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WEDPN4M64V-125BM is a 256-megabit Synchronous DRAM organized as 4M words x 64 bits. This CMOS component features a 6ns access time and supports a four-bank page burst access mode. It operates synchronously with auto and self-refresh capabilities. The WEDPN4M64V-125BM is housed in a 219-ball PBGA package and is rated for operation across a -55°C to +125°C temperature range. Typical applications include high-performance computing, telecommunications infrastructure, and industrial automation systems. The device supports a supply voltage range of 3.0V to 3.6V.
Additional Information
Series: WEDPN4M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| Alternate_Memory_Width | 32 |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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