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WEDPN16M72VR-66BI

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WEDPN16M72VR-66BI

Synchronous DRAM Module, 16MX72, 7.5ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WEDPN16M72VR-66BI is a 16M x 72 Synchronous DRAM Module operating at 3.3V nominal supply voltage within a -40°C to +85°C temperature range. This module features a 7.5ns access time and CMOS technology, organized as a four-bank page burst memory with auto/self-refresh capabilities. The device is housed in a 219-ball PBGA package (R-PBGA-B219), suitable for surface-mount applications. Its high-density memory organization makes it a component for demanding applications in areas such as telecommunications, industrial control, and high-performance computing.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max7.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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