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WEDPN16M72VR-125B2I

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WEDPN16M72VR-125B2I

Synchronous DRAM Module, 16MX72, 5.8ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation WEDPN16M72VR-125B2I is a Synchronous DRAM Module with a memory organization of 16Mx72, providing a total density of 1.2 Gbit. This module operates synchronously with a maximum access time of 5.8 ns and utilizes CMOS technology. It features a four-bank page burst access mode and supports auto/self refresh functionalities. The component is housed in a 219-ball PBGA (grid array) package, suitable for surface mounting. Designed for industrial and commercial applications, this module operates within a temperature range of -40°C to 85°C and has a nominal supply voltage of 3.3V, with a maximum rating of 3.6V.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.8000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeS-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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