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WEDPN16M72VR-100BM

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WEDPN16M72VR-100BM

Synchronous DRAM Module, 16MX72, 6ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WEDPN16M72VR-100BM is a Synchronous DRAM Module with a memory organization of 16MX72, providing a total density of 1207959552 bits. This component operates with a maximum access time of 6ns and features a FOUR BANK PAGE BURST access mode. It supports AUTO REFRESH functionality and is built using CMOS technology. The module is housed in a 219-ball PBGA (R-PBGA-B219) package, designed for surface mounting. Operating within a temperature range of -55°C to 125°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal of 3.3V. This device is suitable for applications in aerospace and defense, telecommunications, and industrial systems demanding high-reliability memory solutions.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO REFRESH
JESD_30_CodeR-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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