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WEDPN16M72V-125BM

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WEDPN16M72V-125BM

Synchronous DRAM Module, 16MX72, 6ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WEDPN16M72V-125BM is a 16M x 72 Synchronous DRAM Module operating with a 6ns access time. This CMOS component features a four-bank page burst access mode and supports auto refresh functionality. It is housed in a 219-ball PBGA (Plastic Ball Grid Array) package with a rectangular shape and bottom terminal positioning. The module operates within a temperature range of -55°C to +125°C and utilizes a supply voltage between 3.0V and 3.6V, with a nominal value of 3.3V. This device is suitable for applications in high-performance computing, telecommunications infrastructure, and industrial control systems requiring high-speed memory solutions.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO REFRESH
JESD_30_CodeR-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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