WEDPN16M72V-125B2C
Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WEDPN16M72V-125B2C is a Synchronous DRAM with a memory organization of 16Mx72 and a maximum access time of 6.0 ns. This component utilizes CMOS technology and operates in synchronous mode with a multi-bank page burst access mode. Key features include auto/self refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The device is housed in a PBGA219 package, a rectangular grid array with 219 solder balls on a 1.270mm pitch. The WEDPN16M72 series component is suitable for applications demanding high-speed data buffering and memory expansion, often found in networking infrastructure, industrial control systems, and high-performance computing. Operating temperature range is 0°C to 70°C.
Additional Information
Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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