WEDPN16M72V-100B2I
Synchronous DRAM, 16MX72, 7ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WEDPN16M72V-100B2I is a high-performance synchronous DRAM with a 16M x 72 memory organization, offering a total density of 1207959552 bits. This component features a fast 7ns access time and operates synchronously with a multi-bank page burst access mode. It supports auto and self-refresh functionalities. Fabricated using CMOS technology, this device is housed in a PBGA219 package with a 1.27mm terminal pitch. The operating temperature range is -40°C to +85°C, with a supply voltage range of 3.0V to 3.6V. This DRAM is suitable for applications in telecommunications, computing, and industrial systems requiring reliable and fast memory solutions.
Additional Information
Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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