WEDPN16M64VR-125B2I
Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPN16M64VR-125B2I is a Synchronous DRAM Module from the WEDPN16M64 series. This component offers a memory organization of 16Mx64, providing a total density of 1 Gigabit. It features a maximum access time of 5.8ns and operates with a supply voltage ranging from 3.0V to 3.6V, with a nominal 3.3V. The module supports a FOUR BANK PAGE BURST access mode and includes AUTO/SELF REFRESH functionality. Encased in a PBGA219 package, this CMOS technology component is designed for surface mounting and operates within an industrial temperature range of -40°C to 85°C. Applications for this device are found in telecommunications, networking, and industrial control systems.
Additional Information
Series: WEDPN16M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 5.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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