WEDPN16M64VR-125B2C
Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WEDPN16M64VR-125B2C is a CMOS Synchronous DRAM Module with a 16Mx64 organization, providing 1024 Megabits of storage. Featuring a fast 5.8ns access time, this module operates in synchronous mode with four-bank page burst access and supports auto/self refresh functionalities. The WEDPN16M64 series component is housed in a PBGA219 package with a 1.27mm terminal pitch and operates within a temperature range of 0°C to 70°C. Its supply voltage ranges from 3.0V to 3.6V, with a nominal 3.3V. This surface-mount component is utilized in various industrial and telecommunications applications requiring high-speed memory solutions.
Additional Information
Series: WEDPN16M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 5.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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