WED416S16030C8SI
Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED416S16030C8SI is a 256Mb Synchronous DRAM (SDRAM) with a memory organization of 16M words by 16 bits. This CMOS component offers a maximum access time of 6.0 ns and operates with a supply voltage range of 3.0V to 3.6V, nominal 3.3V. It supports a FOUR BANK PAGE BURST access mode and features AUTO/SELF REFRESH capabilities. The device is housed in a 54-lead TSOP2 (R-PDSO-G54) package, measuring 22.225mm in length and 10.16mm in width, with a seated height of 1.2mm and a terminal pitch of 0.80mm. Operating temperature ranges from -40°C to +85°C. This component is suitable for applications in telecommunications, networking, and consumer electronics.
Additional Information
Series: WED416S16030RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2250 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 54 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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