WED416S16030C10SI
Synchronous DRAM, 16MX16, 7ns, CMOS, PDSO54Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED416S16030C10SI is a 256Mb Synchronous DRAM, featuring a 16M x 16 memory organization. This CMOS component operates with a maximum access time of 7ns and supports a four-bank page burst access mode. The WED416S16030 series device is housed in a 54-lead TSOP2 package with a 0.8mm terminal pitch, suitable for surface mounting. Key features include auto/self-refresh capabilities and a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. This component is designed for applications requiring high-speed memory, such as networking infrastructure, telecommunications equipment, and industrial automation systems. The operating temperature range is -40°C to +85°C.
Additional Information
Series: WED416S16030RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2250 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 54 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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