WED3EL7216S8ES
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3EL7216S8ES is a DDR1 DRAM component with a memory organization of 16Mx72 and a CAS Latency of 0.8ns. This synchronous memory operates with a four-bank page burst access mode and supports auto/self-refresh functionalities. The device is manufactured using CMOS technology and comes in a 219-ball PBGA (R-PBGA-B219) package. Its operating voltage ranges from 2.3V to 2.7V, with a nominal supply of 2.5V. This component is suitable for applications in telecommunications, networking, and industrial computing where high-speed data buffering and storage are critical. The WED3EL7216 series offers robust performance for demanding system designs.
Additional Information
Series: WED3EL7216RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | DDR1 DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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