WED3EG72M32S263JD3SG
DDR DRAM Module, 32MX72, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WED3EG72M32 series DDR DRAM Module, part number WED3EG72M32S263JD3SG, offers a memory organization of 32M x 72 with a maximum access time of 0.75ns. This synchronous memory component utilizes CMOS technology and operates in a 2.5V nominal supply voltage range (2.3V to 2.7V). It features a four-bank page burst access mode and supports auto/self refresh functions. The module is housed in a 184-terminal DIMM package. Applications for this component are found in telecommunications, industrial automation, and defense systems. The operating temperature range is 0°C to 70°C.
Additional Information
Series: WED3EG72M32RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 2415919104.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
WED3EG72M32S202JD3GG
DDR DRAM Module, 32MX72, 0.75ns, CMOS
WED3EG72M32S202JD3IGG
DDR DRAM Module, 32MX72, 0.75ns, CMOS
WED3EG72M32S202JD3IMG
DDR DRAM Module, 32MX72, 0.75ns, CMOS