WED3EG7233S265JD3G
Synchronous DRAM Module, 16MX16, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3EG7233S265JD3G is a 256Mb Synchronous DRAM Module featuring a 16Mx16 memory organization and CMOS technology. This module operates with a dual bank page burst access mode, offering an access time of 0.75ns. Key features include auto/self-refresh capabilities, LG-MAX, and WD-MAX for enhanced operation. Designed for demanding applications, this component is suitable for use in telecommunications, industrial automation, and embedded systems. The module utilizes a 184-terminal DIMM package with a 1.27mm terminal pitch and operates within a temperature range of 0°C to 70°C, with a nominal supply voltage of 2.5V.
Additional Information
Series: WED3EG7233RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 133.4800 |
| Width | 3.8100 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 30.4800 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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