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WED3EG72256S262JD3-M

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WED3EG72256S262JD3-M

DDR DRAM Module, 256MX72, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's WED3EG72256S262JD3-M is a DDR DRAM module from the WED3EG72256S262 series. This component features a memory organization of 256M x 72, delivering a total density of 19.3 Gbit and a maximum access time of 0.75 ns. Operating in synchronous mode with a CMOS technology, it supports a four-bank page burst access mode and includes auto/self-refresh functionalities. The module operates within a voltage range of 2.3V to 2.7V, with a nominal supply of 2.5V, and functions across an industrial temperature range of 0°C to 70°C. This device is commonly utilized in high-performance computing, networking infrastructure, and embedded systems requiring substantial data throughput and reliability. The 184-terminal DIMM package is designed for surface mount applications.

Additional Information

Series: WED3EG72256S262RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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