WED3EG6432S262D3I
DDR DRAM Module, 32MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3EG6432S262 DDR DRAM Module, WED3EG6432S262D3I, offers a 2Gb memory density with an organization of 32M x 64. This CMOS component features a maximum access time of 0.75ns and operates in Synchronous mode with a FOUR BANK PAGE BURST access mode. Designed for applications requiring high-speed data buffering and storage, it supports AUTO/SELF REFRESH functionality. The module operates within a temperature range of -40°C to 85°C and utilizes a supply voltage between 2.3V and 2.7V, with a nominal value of 2.5V. This memory solution is suitable for use in industrial, networking, and computing systems.
Additional Information
Series: WED3EG6432S262RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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