WED3EG6418S265D3
DDR DRAM Module, 16MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3EG6418S265 is a 16Mx64 DDR DRAM Module utilizing CMOS technology. This component features a 184-terminal configuration and operates in synchronous mode with a four-bank page burst access mode. Key functionalities include auto and self-refresh capabilities, with a nominal supply voltage of 2.5V, ranging from 2.3V to 2.7V. The operating temperature spans from 0°C to 70°C. The memory organization is 16Mx64, providing a total memory density of 1073741824 bits. This DRAM module is suitable for applications within the industrial, networking, and consumer electronics sectors.
Additional Information
Series: WED3EG6418S265RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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