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WED3EG6417S262D4

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WED3EG6417S262D4

DDR DRAM Module, 16MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3EG6417S262D4 is a 16M x 64 DDR DRAM module with a CMOS technology. This component, part of the WED3EG6417S262 series, features a memory density of 1073741824 bits and operates in synchronous mode. It supports a four-bank page burst access mode and includes auto/self-refresh capabilities. The module operates within a temperature range of 0.0°C to 70.0°C and requires a supply voltage between 2.300V and 2.700V, with a nominal value of 2.5V. Its organization is 16MX64, with a memory width of 64. The component is packaged as a rectangular DIMM, designated by the package code R-XDMA-N200. This module is suitable for applications in networking, industrial automation, and consumer electronics.

Additional Information

Series: WED3EG6417S262RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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