WED3EG6417S202D4
DDR DRAM Module, 16MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3EG6417S202D4 is a DDR DRAM Module with a memory organization of 16Mx64, providing a total capacity of 1Gbit. This component operates in Synchronous mode with a 64-bit memory width and utilizes CMOS technology. Key features include FOUR BANK PAGE BURST access mode and AUTO/SELF REFRESH capabilities, enhancing operational efficiency. The module operates within a temperature range of 0°C to 70°C and requires a supply voltage between 2.3V and 2.7V, with a nominal value of 2.5V. Designed as a 200-terminal DIMM package, this electronic component is suitable for applications in industrial automation and telecommunications infrastructure.
Additional Information
Series: WED3EG6417S202RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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