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WED3DL644V8BC

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WED3DL644V8BC

Synchronous DRAM, 4MX64, 6ns, CMOS, PBGA153

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DL644V8BC is a 256Mb Synchronous DRAM. This memory component features a 4M x 64 organization, providing a 64-bit data bus width. It operates with a maximum access time of 6ns and utilizes CMOS technology. The device supports a four-bank page burst access mode and includes auto/self-refresh capabilities. This surface-mount component is housed in a PBGA153 package with a 1.27mm terminal pitch. Its operating voltage range is from 3.0V to 3.6V, with a nominal voltage of 3.3V. Applications for this memory can be found in industrial controls, networking infrastructure, and consumer electronics.

Additional Information

Series: WED3DL644RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length23.0000
Width17.0000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B153
Memory_Density268435456.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals153
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Seated_Height_Max1.9000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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