WED3DL644V10BI
Synchronous DRAM, 4MX64, 7ns, CMOS, PBGA153Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DL644V10BI is a 256Mbit Synchronous DRAM, organized as 4Mx64, offering a 7ns access time. This CMOS component operates in synchronous mode with a four-bank page burst access mode. Key features include AUTO/SELF REFRESH capabilities and a supply voltage range of 3.0V to 3.6V, with a nominal 3.3V. The device is housed in a 153-ball PBGA (R-PBGA-B153) package, measuring 17mm x 23mm with a 1.27mm terminal pitch. Operating temperature spans from -40°C to +85°C. This DRAM is suitable for applications in networking, industrial control, and consumer electronics requiring high-speed memory solutions.
Additional Information
Series: WED3DL644RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 23.0000 |
| Width | 17.0000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B153 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 153 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 1.9000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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