WED3DL328V7BI
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DL328V7BI is a 256Mb CMOS Synchronous DRAM organized as 8Mx32. This memory component offers a maximum access time of 5.4ns and operates with a four-bank page burst access mode. Featuring auto and self-refresh capabilities, it supports a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The device is housed in a rectangular PBGA119 package with a terminal pitch of 1.27mm, suitable for surface mounting. Operating across an industrial temperature range of -40°C to +85°C, this DRAM is utilized in applications requiring high-speed data buffering and storage, including telecommunications infrastructure and industrial automation systems.
Additional Information
Series: WED3DL328RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 5.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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