WED3DL328V10BI
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DL328V10BI is a 256 Megabit Synchronous DRAM from the WED3DL328 series. This component features an 8M x 32 memory organization, providing a total density of 268,435,456 bits. It operates with a maximum access time of 7.0 ns and utilizes CMOS technology. The device supports a four-bank page burst access mode and includes auto/self-refresh capabilities. Packaged in a 119-ball PBGA (R-PBGA-B119) with a 1.27mm terminal pitch, it is designed for surface mounting. Operating within a temperature range of -40°C to +85°C, this DRAM is suitable for applications in networking, telecommunications, and industrial control systems that demand high-speed memory solutions.
Additional Information
Series: WED3DL328RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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