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WED3DL324V8BI

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WED3DL324V8BI

Synchronous DRAM Module, 4MX32, 6ns, CMOS, PBGA119

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DL324V8BI is a 134,217,728 bit Synchronous DRAM Module from the WED3DL324 series. This component features a 4M x 32 memory organization, providing a 32-bit data bus with a density of 4M words. It operates with a maximum access time of 6.0 ns and utilizes CMOS technology. The module supports four-bank page burst access mode and includes auto/self-refresh functionality. Packaged in a 119-ball Plastic Ball Grid Array (PBGA) with a 1.27mm terminal pitch, it is designed for surface mounting. Operating voltage ranges from 3.0V to 3.6V, with a nominal supply of 3.3V. Its operating temperature range is -40°C to +85°C. This component is suitable for applications in telecommunications, industrial control, and high-performance computing systems.

Additional Information

Series: WED3DL324RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.0000
Width14.0000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B119
Memory_Density134217728.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization4MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Seated_Height_Max2.7900
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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