WED3DL324V8BC
Synchronous DRAM Module, 4MX32, 6ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DL324V8BC is a Synchronous DRAM Module featuring a 4Mx32 organization with a memory density of 134,217,728 bits. This CMOS component offers a maximum access time of 6ns and operates in a synchronous, four-bank page burst mode. The module supports auto and self-refresh functions. Packaged in a 119-ball plastic/epoxy PBGA (R-PBGA-B119) with a rectangular shape and bottom-mounted ball terminals, it is designed for surface mounting. The operating voltage range is 3.0V to 3.6V, with a nominal voltage of 3.3V. This component is suitable for applications in telecommunications, industrial automation, and consumer electronics where high-speed memory is critical.
Additional Information
Series: WED3DL324RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 134217728.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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