WED3DL324V10BI
Synchronous DRAM Module, 4MX32, 7ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WED3DL324V10BI is a high-performance synchronous DRAM module organized as 4 Meg x 32 bits, providing a total memory density of 134,217,728 bits. This CMOS component features a rapid 7ns access time and supports a four-bank page burst access mode. The WED3DL324 series module includes auto/self-refresh capabilities and operates within a voltage range of 3.0V to 3.6V, with a nominal supply of 3.3V. Packaged in a PBGA119 (R-PBGA-B119) with a 1.27mm terminal pitch, it is suitable for surface-mount applications. Operating temperatures span from -40°C to +85°C. This module finds application in demanding environments, including aerospace, defense, and industrial systems requiring robust memory solutions.
Additional Information
Series: WED3DL324RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.0000 |
| Width | 14.0000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 134217728.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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