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WED3DL324V10BC

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WED3DL324V10BC

Synchronous DRAM Module, 4MX32, 7ns, CMOS, PBGA119

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation WED3DL324V10BC is a 128 Megabit Synchronous DRAM Module, organized as 4M words by 32 bits. This CMOS component operates with a maximum access time of 7ns and features a FOUR BANK PAGE BURST access mode. It supports AUTO/SELF REFRESH functionality and is housed in a PBGA119 (R-PBGA-B119) package, a rectangular grid array with ball terminals on the bottom. Operating within a temperature range of 0°C to 70°C, this surface-mount device requires a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. The WED3DL324 series module is suitable for applications requiring high-speed data buffering and processing, commonly found in telecommunications, industrial automation, and embedded systems.

Additional Information

Series: WED3DL324RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max7.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B119
Memory_Density134217728.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization4MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals119
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Seated_Height_Max2.7900
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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