WED3DL3216V8BI
Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WED3DL3216V8BI is a 512Mb Synchronous DRAM with a 16Mx32 organization, operating at CMOS levels. This component features a 6ns access time and supports four-bank page burst access mode. It includes auto and self-refresh capabilities, essential for power-sensitive applications. The device is housed in a 119-ball Plastic Ball Grid Array (PBGA) package, designed for surface mounting. Applications for this DRAM can be found in industrial control systems, networking equipment, and embedded computing platforms requiring high-speed memory solutions. The WED3DL3216V8BI operates within a temperature range of 0°C to 70°C and utilizes a supply voltage of 3.3V.
Additional Information
Series: WED3DL3216RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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