WED3DL3216V7BI
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA119Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DL3216V7BI is a 512Mb Synchronous DRAM featuring a 16M x 32 memory organization. This component operates with a 3.3V nominal supply voltage and offers a maximum access time of 5.4ns. Designed with CMOS technology, it supports four-bank page burst access mode and includes auto/self refresh capabilities. The device is housed in a 119-ball PBGA (R-PBGA-B119) package. Applications for this type of memory component are found in networking, telecommunications, and industrial automation systems.
Additional Information
Series: WED3DL3216RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 5.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B119 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 119 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.7900 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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