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WED3DG7266V10D1I-MG

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WED3DG7266V10D1I-MG

Synchronous DRAM Module, 64MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG7266V10D1I-MG is a 64M x 72 Synchronous DRAM Module from the WED3DG7266 series. This CMOS component features a single bank page burst access mode and supports auto and self-refresh functionalities. It operates synchronously with a supply voltage range of 3.0V to 3.6V, nominal at 3.3V, and a wide operating temperature range from -40°C to +85°C. The module's memory organization is 64Mx72, providing a total memory density of 4.375 Gbit. This microelectronic assembly is designed for high-performance applications in sectors such as telecommunications, industrial automation, and computing. The component adheres to the JESD-30 Code R-XZMA-N144 and is presented in a 144-terminal DIMM package.

Additional Information

Series: WED3DG7266RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N144
Memory_Density4831838208.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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