WED3DG7264V10D1G
Synchronous DRAM Module, 32MX16, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DG7264V10D1G is a Synchronous DRAM Module from the WED3DG7264 series. This component features a memory organization of 32Mx16 with a maximum access time of 6.0 ns, operating in CMOS technology. It supports a dual-bank page burst access mode and includes auto/self-refresh functionality. Designed for a supply voltage range of 3.0V to 3.6V with a nominal voltage of 3.3V, this module operates within a temperature range of 0°C to 70°C. Its specifications, including a memory density of 536,870,912 bits and a 144-terminal DIMM package, make it suitable for applications in industrial and telecommunications sectors.
Additional Information
Series: WED3DG7264RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 67.7200 |
| Width | 6.4800 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 32MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 31.7500 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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