Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

WED3DG7216V10D1I

Banner
productimage

WED3DG7216V10D1I

Synchronous DRAM Module, 16MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation WED3DG7216V10D1I is a 16Mx72 Synchronous DRAM Module built on CMOS technology. This module operates as a FOUR BANK PAGE BURST memory with AUTO/SELF REFRESH capabilities. Featuring a 144-terminal Dual Inline Memory Module (DIMM) package, it offers a memory density of over 1.2 Gbit and supports a supply voltage range of 3.0V to 3.6V, with a nominal of 3.3V. Applications for this component are prevalent in telecommunications infrastructure, industrial control systems, and embedded computing platforms demanding high-speed data buffering and storage. The WED3DG7216V10 series is designed for robust performance in demanding environments.

Additional Information

Series: WED3DG7216V10RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
W3EG72125S335JD3SG

DDR DRAM Module, 128MX72, 0.7ns, CMOS

product image
WED3DG644V7WD1I-SG

Synchronous DRAM Module, 4MX64, CMOS

product image
W3EG72129S202JD3

DDR DRAM Module, 128MX8, 0.75ns, CMOS