WED3DG649V75D2I
Synchronous DRAM Module, 8MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WED3DG649V75D2I is a 512Mbit Synchronous DRAM module from the WED3DG649 series. This CMOS component features an 8M x 64 memory organization with a 64-bit memory width, operating in a synchronous mode with a four-bank page burst access mode. Designed for operation within a -40°C to +85°C temperature range and a supply voltage of 3.0V to 3.6V (nominal 3.3V), it supports auto/self-refresh functionality. The module is housed in a 168-terminal DIMM package. This component finds application in computing, networking, and industrial systems requiring high-speed data buffering and memory expansion.
Additional Information
Series: WED3DG649RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 8MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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