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WED3DG647V7D2

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WED3DG647V7D2

Synchronous DRAM Module, 8MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation WED3DG647V7D2 is a 512 Mbit Synchronous DRAM module utilizing CMOS technology. This module, part of the WED3DG647 series, features an 8Mx64 memory organization, providing a 64-bit data width. It supports a four-bank page burst access mode and operates synchronously. The component offers auto/self-refresh capabilities and is packaged in a 168-terminal DIMM. Operating over a temperature range of 0°C to 70°C, this module requires a supply voltage between 3.0V and 3.6V, with a nominal of 3.3V. Applications for this type of memory component can be found in telecommunications, industrial control systems, and computing platforms.

Additional Information

Series: WED3DG647RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density536870912.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization8MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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