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WED3DG6466V7D2F

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WED3DG6466V7D2F

Synchronous DRAM Module, 64MX8, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6466V7D2F is a synchronous DRAM module from the WED3DG6466 series. This component features a memory organization of 64M x 8 bits, delivering a total memory density of 536,870,912 bits. It operates in synchronous mode with a maximum access time of 5.4 nanoseconds and utilizes CMOS technology. Key functionalities include dual bank page burst access, auto and self-refresh capabilities, and support for LG-MAX and WD-MAX features. Designed for a supply voltage range of 3.0V to 3.6V, with a nominal value of 3.3V, this module is suitable for applications requiring high-speed data buffering and storage. Typical industry applications include telecommunications infrastructure, industrial automation, and high-performance computing. The module is presented in a 168-pin DIMM package.

Additional Information

Series: WED3DG6466RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length133.4800
Width2.5400
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
JESD_30_CodeR-XDMA-N168
Memory_Density536870912.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max30.4800
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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