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WED3DG6466V75AD1

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WED3DG6466V75AD1

Synchronous DRAM Module, 64MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG6466V75AD1 is a synchronous DRAM module with a 64M x 64 organization, providing a total memory density of 4Gb. This CMOS component features a maximum access time of 5.4ns and operates with a four-bank page burst access mode. It supports auto and self-refresh functionality. The module is housed in a 144-terminal DIMM package. Designed for demanding applications, this component finds utility in computing, networking infrastructure, and industrial automation systems requiring high-speed memory solutions. The operating temperature range is 0°C to 70°C, with a supply voltage range of 3.0V to 3.6V.

Additional Information

Series: WED3DG6466RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N144
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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