WED3DG6466V10D2G
Synchronous DRAM Module, 64MX8, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DG6466V10D2G is a 512Mb Synchronous DRAM Module from the WED3DG6466 series. This CMOS component features a 64M x 8 memory organization, providing a 6ns maximum access time. It supports dual bank page burst access mode with auto and self-refresh capabilities. Designed for demanding applications, this module operates within a 3.0V to 3.6V supply voltage range and a 0°C to 70°C temperature range. Its 168-pin DIMM package is suitable for embedded systems, networking equipment, and industrial control applications. The WED3DG6466V10D2G offers high-speed data transfer and reliable memory storage.
Additional Information
Series: WED3DG6466RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 133.4800 |
| Width | 2.5400 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 64MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 30.4800 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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