WED3DG6466V10D1
Synchronous DRAM Module, 64MX64, 6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DG6466V10D1 is a 4Gb Synchronous DRAM module featuring a 64MX64 organization. This CMOS component operates with a maximum access time of 6ns and supports a four-bank page burst access mode. It incorporates auto and self-refresh capabilities, essential for power-sensitive applications. The module is designed for synchronous operation and has a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. This device finds application in various sectors including telecommunications, industrial automation, and embedded systems where high-speed memory is critical. The WED3DG6466 series offers robust performance characteristics for demanding memory subsystems.
Additional Information
Series: WED3DG6466RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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