WED3DG6464V10D1I
Synchronous DRAM Module, 64MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG6464V10D1I is a synchronous DRAM module with a 64Mx64 organization, utilizing CMOS technology. This module features a four-bank page burst access mode and supports auto/self refresh functionalities. Its memory density is 4294967296 bits, with a 64-bit memory width. Designed for applications requiring high-speed data access, this component is suitable for use in telecommunications infrastructure, industrial automation, and high-performance computing systems. The WED3DG6464 series component operates within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. It is presented in a 144-terminal DIMM package, a microelectronic assembly designed for robust integration.
Additional Information
Series: WED3DG6464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N144 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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