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WED3DG6463V10D2

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WED3DG6463V10D2

Synchronous DRAM Module, 64MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6463V10D2 is a 168-terminal Synchronous DRAM Module featuring a 64Mx64 organization and CMOS technology. This module operates in synchronous mode with a four-bank page burst access mode and supports auto/self-refresh functionalities. It provides a total memory density of 4294967296 bits and a word count of 67108864 words. The operating supply voltage ranges from 3.0V to 3.6V, with a nominal voltage of 3.3V. Operating temperatures are specified from 0.0°C to 70.0°C. This component is utilized in applications requiring high-speed memory solutions, including telecommunications infrastructure and industrial automation systems. The package style is a rectangular DIMM with dual terminal positions.

Additional Information

Series: WED3DG6463RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density4294967296.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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