WED3DG644V7WD1I-MG
Synchronous DRAM Module, 4MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WED3DG644V7WD1I-MG is a 256Mb Synchronous DRAM Module (WED3DG644 Series) featuring a 4Mx64 memory organization. This CMOS component supports a four-bank page burst access mode and operates synchronously with auto/self-refresh capabilities. It is designed for applications requiring high-speed data access and is suitable for extended operating temperatures ranging from -40°C to +85°C, with a nominal supply voltage of 3.3V. The device is housed in a 144-terminal DIMM package. This memory solution finds application in various industrial systems, networking equipment, and embedded computing platforms.
Additional Information
Series: WED3DG644RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
Request a Quote
Clients Also Buy
WED3DG644V75WD1-S
Synchronous DRAM Module, 4MX64, CMOS
WED3DG644V7WD1I-S
Synchronous DRAM Module, 4MX64, CMOS
WED3DG644V7WD1I-SG
Synchronous DRAM Module, 4MX64, CMOS