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WED3DG644V7D1-M

Synchronous DRAM Module, 4MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG644V7D1-M is a 256Mb Synchronous DRAM Module from the WED3DG644 series. This CMOS component features a 4M x 64 memory organization with a 64-bit data width. It operates in synchronous mode and supports a four-bank page burst access mode. The module includes auto and self-refresh capabilities, operating within a temperature range of 0°C to 70°C. With a supply voltage range of 3.0V to 3.6V (nominal 3.3V), this device is suitable for applications requiring high-speed memory solutions. The 144-terminal package is designed for robust interconnectivity. This component finds application in networking infrastructure, industrial automation, and high-performance computing systems.

Additional Information

Series: WED3DG644RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N144
Memory_Density268435456.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization4MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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