WED3DG644V10WD1I-M
Synchronous DRAM Module, 4MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WED3DG644V10WD1I-M is a 256Mbit Synchronous DRAM module organized as 4M words by 64 bits. This CMOS component operates in a synchronous mode with a four-bank page burst access mode. It features auto and self-refresh capabilities, supporting a nominal supply voltage of 3.3V, with a range from 3.0V to 3.6V. The operating temperature range is -40°C to +85°C. This WED3DG644 series module, part number WED3DG644V10WD1I-M, is designed for high-performance memory applications in areas such as industrial control systems and networking equipment. The component utilizes a 144-terminal package.
Additional Information
Series: WED3DG644RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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