WED3DG644V10WD1-MG
Synchronous DRAM Module, 4MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG644V10WD1-MG is a 268,435,456 bit Synchronous DRAM Module from the WED3DG644 series. This CMOS component features a 4Mx64 memory organization with a four-bank page burst access mode. It supports auto and self-refresh functions, operating at a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The operating temperature spans from 0°C to 70°C. This electronic component, housed in a 144-terminal DIMM package, is suitable for applications requiring high-speed data buffering and memory expansion. Its synchronous operation and burst access capabilities make it ideal for use in networking equipment, industrial control systems, and consumer electronics where efficient memory performance is critical.
Additional Information
Series: WED3DG644RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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