WED3DG644V10D1-S
Synchronous DRAM Module, 4MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WED3DG644V10D1-S is a 256 Mbit Synchronous DRAM Module featuring a 4MX64 organization with CMOS technology. This module operates in a synchronous mode, supporting a four-bank page burst access mode. It includes auto and self-refresh functionalities for efficient memory management. Designed for applications requiring reliable memory solutions, this component is suitable for use in networking infrastructure, industrial control systems, and embedded computing platforms. The module operates within a temperature range of 0°C to 70°C and utilizes a supply voltage nominal of 3.3V, with a maximum of 3.60V. It is housed in a 144-terminal DIMM package.
Additional Information
Series: WED3DG644RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N144 |
| Memory_Density | 268435456.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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