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WED3DG6435V7JD1I-MG

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WED3DG6435V7JD1I-MG

Synchronous DRAM Module, 32MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WED3DG6435V7JD1I-MG is a 2Gb Synchronous DRAM Module from the WED3DG6435 series, featuring a 32M x 64 memory organization. This component operates with a maximum access time of 5.4 ns and is built using CMOS technology. It supports a four-bank page burst access mode for efficient data retrieval. Key features include auto and self-refresh capabilities, with a nominal supply voltage of 3.3V and a range of 3.0V to 3.6V. The operating temperature range is from -40°C to +85°C. This module is suitable for applications in the telecommunications and industrial sectors. The component is housed in a 144-terminal DIMM package.

Additional Information

Series: WED3DG6435RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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