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WED3DG6435V75D1I-QG

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WED3DG6435V75D1I-QG

Synchronous DRAM Module, 32MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG6435V75D1I-QG is a Synchronous DRAM Module with a memory organization of 32Mx64. This component, part of the WED3DG6435 series, features a maximum access time of 5.4ns and operates using CMOS technology. It supports a four-bank page burst access mode and includes auto/self-refresh capabilities. The module is designed for a supply voltage range of 3.00V to 3.60V, with a nominal 3.3V. Operating temperatures are specified from -40.0°C to 85.0°C. This component is utilized in applications such as industrial control, telecommunications, and high-performance computing. The package style is a microelectronic assembly, identified by the JESD-30 code R-XDMA-N144, with 144 terminals.

Additional Information

Series: WED3DG6435RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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