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WED3DG6435V10JD1-MG

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WED3DG6435V10JD1-MG

Synchronous DRAM Module, 32MX64, 6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WED3DG6435V10JD1-MG is a Synchronous DRAM Module from the WED3DG6435 series. This component offers a memory organization of 32M x 64, providing a total memory density of 2Gbit. It features a maximum access time of 6ns and operates using CMOS technology. The module supports a four-bank page burst access mode and includes auto/self-refresh functionality. Designed for a supply voltage range of 3.0V to 3.6V with a nominal voltage of 3.3V, it operates within a temperature range of 0°C to 70°C. This component is commonly utilized in networking infrastructure, industrial automation, and telecommunications equipment. The module is packaged in a 144-terminal DIMM form factor.

Additional Information

Series: WED3DG6435RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N144
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals144
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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